Samsung looks to be taking significant steps towards refining their 6th-generation 1c DRAM in an effort to boost yield rates and set the stage for their HBM4 production.
The importance of Samsung’s 1c DRAM chip can’t be overstated when it comes to the firm’s ambitions with the HBM4 process, which is crucial for the success of their memory products. According to ZDNet Korea, Samsung’s been closely re-evaluating their cutting-edge DRAM designs since the latter half of 2024. The company has now decided to overhaul its premium 1c DRAM, aiming to ensure the seamless integration of their upcoming HBM technology into the industry, unlike the challenges faced with the HBM3 lineup, which hit numerous roadblocks in being adopted by tech giants such as NVIDIA.
The article reveals that Samsung’s advanced DRAM process hasn’t hit the desired yield figures, reportedly around 60-70%. This shortfall is credited to the size of the 1c DRAM chip, which initially, Samsung had tried to reduce in order to boost production volume. However, this reduction compromised process stability, leading to lower yields.
ZDNet Korea notes that Samsung Electronics has opted to redesign the 1c DRAM, increasing its chip size while honing in on yield improvement, with a target set for the middle of this year. The focus seems to be on achieving stable mass production for future memory, even if it involves higher costs.
It’s crucial for Samsung to nail this process, especially as rivals like SK Hynix and Micron have already fine-tuned their designs. With the clock ticking, Samsung is under pressure to meet industry standards following the fallout from their HBM3 issues.
While uncertainty remains regarding the outcome of Samsung’s 6th-generation DRAM process, reports suggest potential developments in the coming months. These advancements could align Samsung’s HBM4 trajectory for mass production by year-end.
